Frank Bösenberg

Assuming evaluation is read as a bilateral talk with the purpose of supporting the further development of your team member, consider 80/20 - 80% listening, 20% speaking - by you, not your team member. In particular for confident (team) leaders this might be a challenge. It might also mean moments of silence. Focus on open questions to encourage the dialogue.

Ongoing (informal) learning is something that should be encorporated in the company culture and requires also a certain failure culture - as a manager, you have to enable your team to have the "Sometimes you win, sometimes you learn" experience ;) Core learning goals could be discussed in regular meetings and entagled with dedicated training days/programs - for an external certification you will need documentation of trainings anyway, so there should be a distinction between formal and informal learning. Consequently, task management is a short/medium-term task while professional (team) development is a medium/long-term task.

When choosing between DRAM and NAND flash, consider the specific needs of your application. DRAM is suitable for tasks requiring fast and temporary data processing, as it offers quick access times but loses data when powered off. In contrast, NAND flash is ideal for applications needing large, stable storage, as it retains data without power and is cost-effective for high-capacity storage, despite slower access times and limited write/erase cycles. For applications requiring both memory and storage features, hybrid technologies like NVDIMM, 3D XPoint, or MRAM may be suitable. This article contains a nice chart that might also be helpful in this regard: https://www.techtarget.com/searchstorage/definition/NAND-flash-memory

Impurities in semiconductors can be categorized as intrinsic, naturally occurring, or extrinsic, which are added intentionally. Extrinsic impurities are further divided into substitutional impurities, where impurity atoms replace host atoms, and interstitial impurities, which occupy spaces between atoms. Defects are classified as point defects (atomic vacancies or wrong atoms), line defects (one-dimensional issues like dislocations), planar defects (two-dimensional problems such as stacking faults), and volume defects (three-dimensional flaws like cracks). Achieving high purity is crucial; for instance, semiconductor doping typically requires about 1 impurity atom per 10^8 host atoms.

In modern semiconductor devices, the introduction of high-k materials has revolutionized the performance of junctions. High-k dielectrics, such as hafnium oxide (HfO2), are used to replace traditional silicon dioxide (SiO2) as gate insulators in transistors. These materials have a higher dielectric constant, which allows for a thinner insulating layer without compromising the electric field strength. This is particularly important in FinFET and Gate-All-Around (GAA) transistor architectures, High-k materials help maintain the effectiveness of the gate control over the channel, thereby improving the subthreshold swing and reducing the short-channel effects that can occur in smaller devices.

At TU Dresden , researchers are actively investigating the potential of nanosheets and other nanostructures in quantum computing. Their work focuses on understanding how these materials can be integrated into quantum devices to enhance performance and stability. The research emphasizes the importance of quantum coherence and how nanoscale materials can be engineered to minimize interactions with their environment, which is a common challenge in maintaining qubit states. Check this nature article for more details: https://www.nature.com/articles/s41565-021-01058-0 .